1 of 3 102199 special features zener characteristic with voltage snap?back to protect against esd hits high avalanche voltage, low leakage and low capacitance avoid signal attenuation compatible to all 5v logic families space saving, low inductance tsoc surface mount package symmetric dual?port bondout to maximize energy dissipation in protection device industrial temperature range symbol and conventions package outline ordering information DS9502p 6-lead tsoc packa ge description this DS9502 was designed as an additional esd protection for sram?based battery?buffered portable memory modules. the memory chips used for these modules have already a strong esd?protection structure on their i/o line. together with the DS9502 the esd protection level is raised to more than 27 kv (iec 801?2 reference model). in case of abnormal esd hits beyond its maximum ratings the DS9502 will eventually fail ?short? thus preventing further damage. during normal operation the DS9502 behaves like a regular 7.5v zener diode. when the voltage exceeds the trigger voltage, the i/v characteristic of the device will ?snapback? allowing the same or higher amount of current to flow, but at a significantly lower voltage. as long as a minimum current or voltage is maintained, the device will stay in the ?snapback mode?. if the voltage or the current falls below the holding voltage or holding current, the device will abruptly change to its normal mode and conduct only a small leakage current. vca a ic c 6 1 5 2 4 3 top view tsoc surface mount package 3.7 x 4.0 x 1.5 mm see mech. drawings section side view DS9502 esd protection diode www.dalsemi.com
DS9502 2 of 3 102199 dc characteristics figure 1 dc characteristics detail drawing figure 2 test pulse waveform figure 3 typical application figure 4
DS9502 3 of 3 102199 physical specifications size see mechanical drawing weight 0.5 grams absolute maximum ratings* operating temperature ?40c to +85c storage temperature ?55c to +125c soldering temperature 260c for 10 seconds continuous dc current through package 80 ma * this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. exposure to absolute maximum rating conditions for extended periods of time may affect reliability. electrical characteristics (-40 c to +85 c) parameter symbol min typ max units notes leakage current i l 30 100 na 2 avalanche voltage v av 7.4 7.8 v 1,3 trigger voltage v trigger 9.0 9.5 v 1 trigger current i trigger 600 1000 ma holding voltage v hold 5.5 v 1 holding current i h old 30 ma forward voltage (-10 ma) v f -0.7 -0.8 v 4 forward current (-0.7v) i f -10 -100 ma 4 maximum peak current i pp 2.0 a 5 continuous current through diode i cc 160 ma 6 capacitance ( t a =25 c) parameter symbol min typ max units notes junction capacitance (5v) c j5 55 pf 1 junction capacitance (0v) c j0 100 pf 1 thermal resistance parameter symbol min typ max units notes junction to package r q jc 75 k/w junction to ambient r q ja 200 k/w notes: 1. all voltages are referenced from cathode to anode. 2. at 7.0v. 3. at 0.3 m a. 4. typical values at room temperature. 5. see pulse specification. 6. in either direction (forward or reverse) through the diode (pins 1 & 6 and 2 & 5 tied together, otherwise +80 ma max).
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